PART |
Description |
Maker |
MGFC45V5867 |
MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V5867 |
5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
EIA1818-2P EIB1818-2P |
18.15-18.75GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
TIM1314-30L09 |
HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
KF446A |
400MHz Band(50ohm) SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THE RECEIVING RF CIRCUITS OF TRANSCEIVER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
TQP9059 |
TRIUMFMMPA Module with Quad-Band GSM/EDGE and Hepta-Band W/CDMA/HSPA /LTE
|
Qorvo
|
ESLB-P540A ESLB-P540A-2 ESLB-P540A-1 |
4.9-5.9GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|